Tp0610k t1 e3 sot23 3 чем заменить
TP0610K Datasheet (PDF)
TP0610KNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA)60 6 @ VGS = 10 V 1 to 3.0 185FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Low On-Resistance: 6 D Low Offset (Error
..2. tp0610k.pdf Size:207K _vishay
TP0610KVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 6 at VGS = — 10 V — 1 to — 3 — 185 High-Side Switching Low On-Resistance: 6 Low Threshold: — 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.)TO-236
TP0610KL/BS250KLNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD ESD Protected: 2000 VV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A)APPLICATIONS6 @ VGS = -10 V -0.27-60 -1 to 3060 1 to -3.010 @ VGS = -4.5 V -0.21D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Battery Oper
0.2. tp0610k-t1.pdf Size:898K _cn_vbsemi
TP0610K-T1www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3 at VGS = — 10 V — 1 to — 3 -500 High-Side Switching Low On-Resistance: 3 Low Threshold: — 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Lo
TP0610L/T, VP0610L/T, BS250Vishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18FEATUR
8.2. tp0610t.pdf Size:474K _supertex
TP0610TP-Channel Enhancement ModeVertical DMOS FETsFeaturesGeneral Description High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs Low power drive requirementwell-proven silicon-gate manufacturing process. This Ease of parallelingcombination produces a device with the
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TP0610K-T1-E3 аналог TP0610K-T1-GE3
The TP0610K-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers. . Low ON-resistance . High-side switching . Low threshold . 20ns Fast switching speed . 20pF low input capacitance . 2000V ESD protection
TP0610K-T1-GE3 Обзор
The TP0610K-T1-GE3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers. . Low ON-resistance . High-side switching . Low threshold . 20ns Fast switching speed . 20pF low input capacitance . 2000V ESD protection . Halogen-free
TP0610K-T1-E3 Аналоги
образ модель Производители Название продукта Тип описание PDF сравнить 
TP0610K-T1-GE3
TP0610K-T1-E3 отечественный анало TP0610K-T1-GE3: TP0610K-T1-E3 TO-236 P-Channel -60V -185mA 10ohms, TP0610K-T1-GE3 SOT-23 P-Channel -60V -185mA. TP0610K-T1-E3 характеристики и его российские аналоги TP0610K-T1-GE3: TP0610K-T1-E3 MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃, TP0610K-T1-GE3 MOSFET 60V -0.185A 350mW 10Ω @ 4.5V. TP0610K-T1-E3 аналоги TP0610K-T1-GE3 Корпус/Пакет: TP0610K-T1-E3 MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃, TP0610K-T1-GE3 MOSFET 60V -0.185A 350mW 10Ω @ 4.5V.
Tp0610k t1 e3 sot23 3 чем заменить
TP0610K MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TP0610K
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 0.35 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 0.185 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 1.7 nC
Время включения (ton): 20 ns
Выходная емкость (Cd): 10 pf
Сопротивление сток-исток открытого транзистора (Rds): 6 Ohm
TP0610K Datasheet (PDF)
TP0610KNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA)60 6 @ VGS = 10 V 1 to 3.0 185FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Low On-Resistance: 6 D Low Offset (Error
..2. tp0610k.pdf Size:207K _vishay
TP0610KVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 6 at VGS = — 10 V — 1 to — 3 — 185 High-Side Switching Low On-Resistance: 6 Low Threshold: — 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.)TO-236
TP0610KL/BS250KLNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD ESD Protected: 2000 VV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A)APPLICATIONS6 @ VGS = -10 V -0.27-60 -1 to 3060 1 to -3.010 @ VGS = -4.5 V -0.21D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Battery Oper
0.2. tp0610k-t1.pdf Size:898K _cn_vbsemi
TP0610K-T1www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3 at VGS = — 10 V — 1 to — 3 -500 High-Side Switching Low On-Resistance: 3 Low Threshold: — 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Lo
TP0610L/T, VP0610L/T, BS250Vishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18FEATUR
8.2. tp0610t.pdf Size:474K _supertex
TP0610TP-Channel Enhancement ModeVertical DMOS FETsFeaturesGeneral Description High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs Low power drive requirementwell-proven silicon-gate manufacturing process. This Ease of parallelingcombination produces a device with the
Tp0610k t1 e3 sot23 3 чем заменить
Acer Aspire 5310 не включается.
| Acer_Aspire_5315_5720_7720_Compal_LA-3551P.pdf (1.21 Мб, 255 просмотров) |
| _docs_71411_tp0610k.pdf (206.2 Кб, 187 просмотров) |
Acer Aspire 5560g — Не включается
Всем привет! Ноутбук Acer Aspire 5560g. Перестал включаться, как я понимаю, не подается питание.
Acer Aspire 5552 не включается
Всем доброго времени суток! Такая история: Нажимаю кнопку включения, кулер стартует на.
Tp0610k t1 e3 sot23 3 чем заменить
0. wolfram12 07.09.15 18:50
2. serry 07.09.15 19:19
3. Suhov 07.09.15 21:38
4. serry 08.09.15 17:02
5. wolfram12 15.09.15 10:51
Tp0610k t1 e3 sot23 3 чем заменить
TP0610K MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
TP0610K Datasheet (PDF)
TP0610KNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA)60 6 @ VGS = 10 V 1 to 3.0 185FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Low On-Resistance: 6 D Low Offset (Error
..2. tp0610k.pdf Size:207K _vishay
TP0610KVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 6 at VGS = — 10 V — 1 to — 3 — 185 High-Side Switching Low On-Resistance: 6 Low Threshold: — 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.)TO-236
TP0610KL/BS250KLNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD ESD Protected: 2000 VV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A)APPLICATIONS6 @ VGS = -10 V -0.27-60 -1 to 3060 1 to -3.010 @ VGS = -4.5 V -0.21D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Battery Oper
0.2. tp0610k-t1.pdf Size:898K _cn_vbsemi
TP0610K-T1www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3 at VGS = — 10 V — 1 to — 3 -500 High-Side Switching Low On-Resistance: 3 Low Threshold: — 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Lo
TP0610L/T, VP0610L/T, BS250Vishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18FEATUR
8.2. tp0610t.pdf Size:474K _supertex
TP0610TP-Channel Enhancement ModeVertical DMOS FETsFeaturesGeneral Description High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs Low power drive requirementwell-proven silicon-gate manufacturing process. This Ease of parallelingcombination produces a device with the
TP0610K-T1-E3 аналог TP0610K-T1-GE3
The TP0610K-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers. . Low ON-resistance . High-side switching . Low threshold . 20ns Fast switching speed . 20pF low input capacitance . 2000V ESD protection
TP0610K-T1-GE3 Обзор
The TP0610K-T1-GE3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers. . Low ON-resistance . High-side switching . Low threshold . 20ns Fast switching speed . 20pF low input capacitance . 2000V ESD protection . Halogen-free
TP0610K-T1-E3 Аналоги
образ модель Производители Название продукта Тип описание PDF сравнить TP0610K-T1-GE3